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Search Results: Records 1-5 displayed on this page of 5
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Oral presentation

Relationship between the dose rate of $$gamma$$-rays and the electrical characteristics of p-Channel 6H-SiC MOSFETs

Hishiki, Shigeomi; Oshima, Takeshi; Iwamoto, Naoya; Kawano, Katsuyasu*; Ito, Hisayoshi

no journal, , 

no abstracts in English

Oral presentation

Qualitative analysis of $$gamma$$-ray irradiation effect on the characteristics of P type 6H-SiC schottky diodes

Sudjadi, U.; Iwamoto, Naoya; Hishiki, Shigeomi; Oshima, Takeshi; Kawano, Katsuyasu*

no journal, , 

no abstracts in English

Oral presentation

Charge collection from 6H-SiC n$$^{+}$$p diodes irradiated with 12 MeV-Au ions

Iwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.

no journal, , 

no abstracts in English

Oral presentation

First-principles molecular dynamics study of SiO$$_{2}$$/4H-SiC(0001) interface oxidation process; Formation of carbon cluster

Onuma, Toshiharu*; Miyashita, Atsumi; Iwasawa, Misako*; Yoshikawa, Masahito; Tsuchida, Hidekazu*

no journal, , 

no abstracts in English

Oral presentation

Generation of amorphous SiO$$_{2}$$/SiC interface by the simulation; First-principles molecular dynamics

Miyashita, Atsumi; Onuma, Toshiharu*; Iwasawa, Misako*; Tsuchida, Hidekazu*; Yoshikawa, Masahito

no journal, , 

no abstracts in English

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